TY - JOUR
T1 - Self-aligned capillarity-assisted printing of top-gate thin-film transistors on plastic
AU - Hyun, Woo Jin
AU - Secor, Ethan B.
AU - Zare Bidoky, Fazel
AU - Walker, S. Brett
AU - Lewis, Jennifer A.
AU - Hersam, Mark C.
AU - Francis, Lorraine F.
AU - Frisbie, C. Daniel
N1 - Publisher Copyright:
© 2018 IOP Publishing Ltd.
PY - 2018/9
Y1 - 2018/9
N2 - Top-gate thin-film transistors (TFTs) are fabricated on plastic using a self-aligned method based on capillarity-assisted lithography and inkjet printing, offering a promising platform for high-throughput manufacturing of flexible electronic devices. Plastic substrates are imprinted with a multi-tier structure containing capillary channels and ink receivers using a precision mold. Liquid inks are sequentially delivered to the microstructured substrate by inkjet printing, and capillary action draws the inks into a multi-tier capillary channel network designed for top-gate TFTs. The combination of imprinting, inkjet printing, and capillary flow yields self-aligned multi-layered devices without requiring precise registration for inkjet printing. The printed top-gate TFTs with Ag/Cu source and drain, poly(3-hexylthiophene) semiconducting channel, ion gel dielectric, and graphene gate electrode have desirable transfer and output characteristics, with a hole mobility of 0.48 cm2 V-1 s-1, threshold voltage of -0.86 V, on/off current ratio of 104.5, and robust tolerance to bending. The top-gate geometry and careful materials selection yields devices with negligible hysteresis and sweep rate dependence, establishing the versatility and utility of this self-aligned strategy for more widespread application in printed and flexible electronics.
AB - Top-gate thin-film transistors (TFTs) are fabricated on plastic using a self-aligned method based on capillarity-assisted lithography and inkjet printing, offering a promising platform for high-throughput manufacturing of flexible electronic devices. Plastic substrates are imprinted with a multi-tier structure containing capillary channels and ink receivers using a precision mold. Liquid inks are sequentially delivered to the microstructured substrate by inkjet printing, and capillary action draws the inks into a multi-tier capillary channel network designed for top-gate TFTs. The combination of imprinting, inkjet printing, and capillary flow yields self-aligned multi-layered devices without requiring precise registration for inkjet printing. The printed top-gate TFTs with Ag/Cu source and drain, poly(3-hexylthiophene) semiconducting channel, ion gel dielectric, and graphene gate electrode have desirable transfer and output characteristics, with a hole mobility of 0.48 cm2 V-1 s-1, threshold voltage of -0.86 V, on/off current ratio of 104.5, and robust tolerance to bending. The top-gate geometry and careful materials selection yields devices with negligible hysteresis and sweep rate dependence, establishing the versatility and utility of this self-aligned strategy for more widespread application in printed and flexible electronics.
KW - capillarity-assisted lithography
KW - flexible electronics
KW - inkjet printing
KW - thin-film transistor
KW - top-gate structure
UR - http://www.scopus.com/inward/record.url?scp=85055170940&partnerID=8YFLogxK
U2 - 10.1088/2058-8585/aad476
DO - 10.1088/2058-8585/aad476
M3 - 文章
AN - SCOPUS:85055170940
SN - 2058-8585
VL - 3
JO - Flexible and Printed Electronics
JF - Flexible and Printed Electronics
IS - 3
M1 - 035004
ER -