Schottky contacts of Gd-Pt and Gd-V alloys on n-Si and p-Si

TY - JOUR

T1 - Schottky contacts of Gd-Pt and Gd-V alloys on n-Si and p-Si

AU - Thompson, R.

AU - Eizenberg, M.

AU - Tu, K. N.

PY - 1981

Y1 - 1981

N2 - Alloys of Gd-Pt and Gd-V, both Gd-rich and Pt or V-rich, have been prepared by coevaporation onto n- and p-type Si for Schottky contact formation. Structural and electrical properties of these contacts after various heat treatments have been studied by combining x-ray diffraction, backscattering spectroscopy, and current-voltage measurement. We found that these alloys produced a mixture of silicides on Si; i.e., they formed parallel contacts of GdSi2 and PtSi or GdSi2 and VSi2 to Si. We also found that the sum of apparent Schottky barrier heights of these parallel contacts on n-Si and p-Si is not necessarily equal to the value of the band gap of Si, which we recall is always true for a single phase contact.

AB - Alloys of Gd-Pt and Gd-V, both Gd-rich and Pt or V-rich, have been prepared by coevaporation onto n- and p-type Si for Schottky contact formation. Structural and electrical properties of these contacts after various heat treatments have been studied by combining x-ray diffraction, backscattering spectroscopy, and current-voltage measurement. We found that these alloys produced a mixture of silicides on Si; i.e., they formed parallel contacts of GdSi2 and PtSi or GdSi2 and VSi2 to Si. We also found that the sum of apparent Schottky barrier heights of these parallel contacts on n-Si and p-Si is not necessarily equal to the value of the band gap of Si, which we recall is always true for a single phase contact.

UR - http://www.scopus.com/inward/record.url?scp=0019635016&partnerID=8YFLogxK

U2 - 10.1063/1.328629

DO - 10.1063/1.328629

M3 - 文章

AN - SCOPUS:0019635016

SN - 0021-8979

VL - 52

SP - 6763

EP - 6768

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

ER -