Role of Transport during Transient Phenomena in AlGaN/GaN Heterostructure FETs

Shlomo Mehari; Yonatan Calahorra; Arkady Gavrilov; Moshe Eizenberg; Dan Ritter

doi:10.1109/LED.2015.2476959

Role of Transport during Transient Phenomena in AlGaN/GaN Heterostructure FETs

Shlomo Mehari, Yonatan Calahorra, Arkady Gavrilov, Moshe Eizenberg, Dan Ritter

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Transient phenomena in AlGaN/GaN heterostructure field-effect transistors are attributed to trapping and detrapping of electrons from deep localized states, and the measured activation energies are conventionally associated with the electron capture and emission processes. This standard interpretation ignores, however, transport between the two-dimensional electron gas and the trap. Using gated van der Pauw structures, we demonstrate that the transient behavior is determined by transport (at least for the trapping process). The measured activation energy is, therefore, a characteristic of the transport process rather than the emission-capture processes.

Original language	English
Article number	7244159
Pages (from-to)	1124-1127
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	36
Issue number	11
DOIs	https://doi.org/10.1109/LED.2015.2476959
State	Published - 1 Nov 2015
Externally published	Yes

Keywords

GaN
Hall effect
heterostructure field effect transistors (HFETs)
transients
trapping

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10.1109/LED.2015.2476959

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title = "Role of Transport during Transient Phenomena in AlGaN/GaN Heterostructure FETs",

abstract = "Transient phenomena in AlGaN/GaN heterostructure field-effect transistors are attributed to trapping and detrapping of electrons from deep localized states, and the measured activation energies are conventionally associated with the electron capture and emission processes. This standard interpretation ignores, however, transport between the two-dimensional electron gas and the trap. Using gated van der Pauw structures, we demonstrate that the transient behavior is determined by transport (at least for the trapping process). The measured activation energy is, therefore, a characteristic of the transport process rather than the emission-capture processes.",

keywords = "GaN, Hall effect, heterostructure field effect transistors (HFETs), transients, trapping",

author = "Shlomo Mehari and Yonatan Calahorra and Arkady Gavrilov and Moshe Eizenberg and Dan Ritter",

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T1 - Role of Transport during Transient Phenomena in AlGaN/GaN Heterostructure FETs

AU - Mehari, Shlomo

AU - Calahorra, Yonatan

AU - Gavrilov, Arkady

AU - Eizenberg, Moshe

AU - Ritter, Dan

PY - 2015/11/1

Y1 - 2015/11/1

N2 - Transient phenomena in AlGaN/GaN heterostructure field-effect transistors are attributed to trapping and detrapping of electrons from deep localized states, and the measured activation energies are conventionally associated with the electron capture and emission processes. This standard interpretation ignores, however, transport between the two-dimensional electron gas and the trap. Using gated van der Pauw structures, we demonstrate that the transient behavior is determined by transport (at least for the trapping process). The measured activation energy is, therefore, a characteristic of the transport process rather than the emission-capture processes.

AB - Transient phenomena in AlGaN/GaN heterostructure field-effect transistors are attributed to trapping and detrapping of electrons from deep localized states, and the measured activation energies are conventionally associated with the electron capture and emission processes. This standard interpretation ignores, however, transport between the two-dimensional electron gas and the trap. Using gated van der Pauw structures, we demonstrate that the transient behavior is determined by transport (at least for the trapping process). The measured activation energy is, therefore, a characteristic of the transport process rather than the emission-capture processes.

KW - GaN

KW - Hall effect

KW - heterostructure field effect transistors (HFETs)

KW - transients

KW - trapping

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M3 - 文章

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SP - 1124

EP - 1127

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 11

M1 - 7244159

ER -

Role of Transport during Transient Phenomena in AlGaN/GaN Heterostructure FETs

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