Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition

TY - JOUR

T1 - Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition

AU - Krylov, Igor

AU - Qi, Yuanshen

AU - Korchnoy, Valentina

AU - Weinfeld, Kamira

AU - Eizenberg, Moshe

AU - Yalon, Eilam

N1 - Publisher Copyright: © 2020 Author(s).

PY - 2020/5/1

Y1 - 2020/5/1

N2 - Film crystallinity is one of the key factors determining the resistivity of thin conductive nitride films. In the process of plasma enhanced atomic layer deposition (PEALD), the film crystallinity can be significantly improved by the ion bombardment effect taking place at a low pressure. At a low plasma pressure, ion bombardment supplies additional energy for adatom rearrangement and ligand desorption which significantly enhances the film crystallinity. The deposition of low resistive (∼300 μω cm) TiN films is demonstrated here at a temperature as low as 100 °C. The role of deposition temperature on TiN PEALD structure and electrical properties, such as resistivity and temperature coefficient of resistivity, is investigated. The effect of postdeposition annealing is discussed as well. The resistivity can be further reduced (to ∼60 μω cm) by increasing deposition temperature up to 250 °C or by postdeposition annealing. The increased temperature results in larger grain size, which is the dominant factor in determining the electrical properties of the film.

AB - Film crystallinity is one of the key factors determining the resistivity of thin conductive nitride films. In the process of plasma enhanced atomic layer deposition (PEALD), the film crystallinity can be significantly improved by the ion bombardment effect taking place at a low pressure. At a low plasma pressure, ion bombardment supplies additional energy for adatom rearrangement and ligand desorption which significantly enhances the film crystallinity. The deposition of low resistive (∼300 μω cm) TiN films is demonstrated here at a temperature as low as 100 °C. The role of deposition temperature on TiN PEALD structure and electrical properties, such as resistivity and temperature coefficient of resistivity, is investigated. The effect of postdeposition annealing is discussed as well. The resistivity can be further reduced (to ∼60 μω cm) by increasing deposition temperature up to 250 °C or by postdeposition annealing. The increased temperature results in larger grain size, which is the dominant factor in determining the electrical properties of the film.

UR - http://www.scopus.com/inward/record.url?scp=85082140040&partnerID=8YFLogxK

U2 - 10.1116/6.0000028

DO - 10.1116/6.0000028

M3 - 文章

AN - SCOPUS:85082140040

SN - 0734-2101

VL - 38

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 3

M1 - 032403

ER -