Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition

Igor Krylov; Xianbin Xu; Ekaterina Zoubenko; Kamira Weinfeld; Santiago Boyeras; Felix Palumbo; Moshe Eizenberg; Dan Ritter

doi:10.1116/1.5057761

Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition

Igor Krylov, Xianbin Xu, Ekaterina Zoubenko, Kamira Weinfeld, Santiago Boyeras, Felix Palumbo, Moshe Eizenberg, Dan Ritter

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

The authors report on the role of various reactive gases on the structure and properties of TiN thin films prepared by plasma enhanced atomic layer deposition (PEALD) from tetrakis(dimethylamido)titanium. The reactive gas plays an important role determining the film structure and properties. Nitrogen-based plasma (N-₂ and NH₃) resulted in low oxygen (∼3%) and carbon (∼2%) contamination and well-defined columnar grain structure. A nitrogen excess (∼4%) was found in the films deposited using N₂ plasma. The stoichiometric films and lowest resistivity (∼80 μΩ cm) were achieved using NH₃ plasma. Deposition using H₂ plasma resulted in higher carbon and oxygen contamination (∼6% for each element). The reactive gas also plays an important role in determining the grain size and preferential orientation. By varying the plasma chemistry, either (111) or (100) oriented films can be obtained. A mechanism determining the PEALD TiN preferential orientation is proposed. Finally, plasma induced degradation of the underlying dielectric layer is evaluated.

Original language	English
Article number	06A105
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	36
Issue number	6
DOIs	https://doi.org/10.1116/1.5057761
State	Published - 1 Nov 2018
Externally published	Yes

Access to Document

10.1116/1.5057761

Cite this

@article{1f067751dcc5443694a00bfddd8d9309,

title = "Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition",

abstract = "The authors report on the role of various reactive gases on the structure and properties of TiN thin films prepared by plasma enhanced atomic layer deposition (PEALD) from tetrakis(dimethylamido)titanium. The reactive gas plays an important role determining the film structure and properties. Nitrogen-based plasma (N-2 and NH3) resulted in low oxygen (∼3%) and carbon (∼2%) contamination and well-defined columnar grain structure. A nitrogen excess (∼4%) was found in the films deposited using N2 plasma. The stoichiometric films and lowest resistivity (∼80 μΩ cm) were achieved using NH3 plasma. Deposition using H2 plasma resulted in higher carbon and oxygen contamination (∼6% for each element). The reactive gas also plays an important role in determining the grain size and preferential orientation. By varying the plasma chemistry, either (111) or (100) oriented films can be obtained. A mechanism determining the PEALD TiN preferential orientation is proposed. Finally, plasma induced degradation of the underlying dielectric layer is evaluated.",

author = "Igor Krylov and Xianbin Xu and Ekaterina Zoubenko and Kamira Weinfeld and Santiago Boyeras and Felix Palumbo and Moshe Eizenberg and Dan Ritter",

note = "Publisher Copyright: {\textcopyright} 2018 Author(s).",

year = "2018",

month = nov,

day = "1",

doi = "10.1116/1.5057761",

language = "英语",

volume = "36",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "6",

}

TY - JOUR

T1 - Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition

AU - Krylov, Igor

AU - Xu, Xianbin

AU - Zoubenko, Ekaterina

AU - Weinfeld, Kamira

AU - Boyeras, Santiago

AU - Palumbo, Felix

AU - Eizenberg, Moshe

AU - Ritter, Dan

PY - 2018/11/1

Y1 - 2018/11/1

N2 - The authors report on the role of various reactive gases on the structure and properties of TiN thin films prepared by plasma enhanced atomic layer deposition (PEALD) from tetrakis(dimethylamido)titanium. The reactive gas plays an important role determining the film structure and properties. Nitrogen-based plasma (N-2 and NH3) resulted in low oxygen (∼3%) and carbon (∼2%) contamination and well-defined columnar grain structure. A nitrogen excess (∼4%) was found in the films deposited using N2 plasma. The stoichiometric films and lowest resistivity (∼80 μΩ cm) were achieved using NH3 plasma. Deposition using H2 plasma resulted in higher carbon and oxygen contamination (∼6% for each element). The reactive gas also plays an important role in determining the grain size and preferential orientation. By varying the plasma chemistry, either (111) or (100) oriented films can be obtained. A mechanism determining the PEALD TiN preferential orientation is proposed. Finally, plasma induced degradation of the underlying dielectric layer is evaluated.

AB - The authors report on the role of various reactive gases on the structure and properties of TiN thin films prepared by plasma enhanced atomic layer deposition (PEALD) from tetrakis(dimethylamido)titanium. The reactive gas plays an important role determining the film structure and properties. Nitrogen-based plasma (N-2 and NH3) resulted in low oxygen (∼3%) and carbon (∼2%) contamination and well-defined columnar grain structure. A nitrogen excess (∼4%) was found in the films deposited using N2 plasma. The stoichiometric films and lowest resistivity (∼80 μΩ cm) were achieved using NH3 plasma. Deposition using H2 plasma resulted in higher carbon and oxygen contamination (∼6% for each element). The reactive gas also plays an important role in determining the grain size and preferential orientation. By varying the plasma chemistry, either (111) or (100) oriented films can be obtained. A mechanism determining the PEALD TiN preferential orientation is proposed. Finally, plasma induced degradation of the underlying dielectric layer is evaluated.

UR - http://www.scopus.com/inward/record.url?scp=85056780571&partnerID=8YFLogxK

U2 - 10.1116/1.5057761

DO - 10.1116/1.5057761

M3 - 文章

AN - SCOPUS:85056780571

SN - 0734-2101

VL - 36

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 6

M1 - 06A105

ER -

Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition

Abstract

Access to Document

Other files and links

Fingerprint

Cite this