Abstract
The resistive switching (RS) phenomenon is currently attracting a lot of attention due to its potential applicability for nonvolatile memory devices. Among all the systems currently under consideration, the analysis of MG/Al 2O3/InGaAs is very relevant since this stack is a strong candidate for the new generation of CMOS devices with high mobility channels.
Original language | English |
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Pages (from-to) | 83-86 |
Number of pages | 4 |
Journal | Microelectronic Engineering |
Volume | 109 |
DOIs | |
State | Published - 2013 |
Externally published | Yes |
Keywords
- High-k dielectrics
- Oxide breakdown
- Resistive switching