Abstract
Thin films of amorphous Si1-xGex:H with x=0, 0.3, 0.6, and 1 were deposited by RF glow discharge at 200-250°C on SnO2/glass substrates. The tin dioxide was reduced by heat treatment at the temperature range of 400-600°C resulting in a layered structure of silicon oxide, tin suboxide and β-Sn which formed at the a-Si1-xGex:H/SnO2 interface. A strong dependence of the extent of the reduction on the Ge content in the a-Si1-xGex:H films was found: at low temperatures (T<475°C) the Si-rich layers were more reactive, whereas at T>475°C the Ge-rich films totally reduced the SnO2. The interfacial reduction process was followed by a drop in the transparency and drastic changes in the sheet resistance of the a-Si1-xGex:H/SnO2 contacts.
Original language | English |
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Pages (from-to) | 589-594 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 337 |
State | Published - 1994 |
Externally published | Yes |
Event | Proceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA Duration: 4 Apr 1994 → 8 Apr 1994 |