Printed, 1 V electrolyte-gated transistors based on poly(3-hexylthiophene) operating at >10 kHz on plastic

Fazel Zare Bidoky; Woo Jin Hyun; Donghoon Song; C. Daniel Frisbie

doi:10.1063/1.5025475

Printed, 1 V electrolyte-gated transistors based on poly(3-hexylthiophene) operating at >10 kHz on plastic

Fazel Zare Bidoky, Woo Jin Hyun, Donghoon Song, C. Daniel Frisbie^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Electrolyte-gated transistors (EGTs) based on poly(3-hexylthiophene) (P3HT) offer low voltage operation, high transconductance, good operational stability, and low contact resistance. These characteristics derive from the massive electrochemical or double layer capacitance (∼10-100 μF/cm²) of the electrolyte layer that serves as the gate dielectric. However, electric double layer (EDL) formation at the source/electrolyte and drain/electrolyte interfaces results in significant parasitic capacitance in EGTs which degrades dynamic switching performance. Parasitic capacitance in EGTs is reduced by covering the top surfaces of the source/drain electrodes with a low-ĸ dielectric (∼0.6 nF/cm²). The low-ĸ dielectric blocks EDL formation on the electrode surfaces that are in direct contact with the gate electrolyte, reducing the parasitic capacitance by a factor of 10⁴ and providing a route to printed P3HT EGTs on plastic operating at switching frequencies exceeding 10 kHz with 1 V supply voltages.

Original language	English
Article number	053301
Journal	Applied Physics Letters
Volume	113
Issue number	5
DOIs	https://doi.org/10.1063/1.5025475
State	Published - 30 Jul 2018
Externally published	Yes

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title = "Printed, 1 V electrolyte-gated transistors based on poly(3-hexylthiophene) operating at >10 kHz on plastic",

abstract = "Electrolyte-gated transistors (EGTs) based on poly(3-hexylthiophene) (P3HT) offer low voltage operation, high transconductance, good operational stability, and low contact resistance. These characteristics derive from the massive electrochemical or double layer capacitance (∼10-100 μF/cm2) of the electrolyte layer that serves as the gate dielectric. However, electric double layer (EDL) formation at the source/electrolyte and drain/electrolyte interfaces results in significant parasitic capacitance in EGTs which degrades dynamic switching performance. Parasitic capacitance in EGTs is reduced by covering the top surfaces of the source/drain electrodes with a low-ĸ dielectric (∼0.6 nF/cm2). The low-ĸ dielectric blocks EDL formation on the electrode surfaces that are in direct contact with the gate electrolyte, reducing the parasitic capacitance by a factor of 104 and providing a route to printed P3HT EGTs on plastic operating at switching frequencies exceeding 10 kHz with 1 V supply voltages.",

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doi = "10.1063/1.5025475",

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AU - Zare Bidoky, Fazel

AU - Hyun, Woo Jin

AU - Song, Donghoon

AU - Frisbie, C. Daniel

PY - 2018/7/30

Y1 - 2018/7/30

N2 - Electrolyte-gated transistors (EGTs) based on poly(3-hexylthiophene) (P3HT) offer low voltage operation, high transconductance, good operational stability, and low contact resistance. These characteristics derive from the massive electrochemical or double layer capacitance (∼10-100 μF/cm2) of the electrolyte layer that serves as the gate dielectric. However, electric double layer (EDL) formation at the source/electrolyte and drain/electrolyte interfaces results in significant parasitic capacitance in EGTs which degrades dynamic switching performance. Parasitic capacitance in EGTs is reduced by covering the top surfaces of the source/drain electrodes with a low-ĸ dielectric (∼0.6 nF/cm2). The low-ĸ dielectric blocks EDL formation on the electrode surfaces that are in direct contact with the gate electrolyte, reducing the parasitic capacitance by a factor of 104 and providing a route to printed P3HT EGTs on plastic operating at switching frequencies exceeding 10 kHz with 1 V supply voltages.

AB - Electrolyte-gated transistors (EGTs) based on poly(3-hexylthiophene) (P3HT) offer low voltage operation, high transconductance, good operational stability, and low contact resistance. These characteristics derive from the massive electrochemical or double layer capacitance (∼10-100 μF/cm2) of the electrolyte layer that serves as the gate dielectric. However, electric double layer (EDL) formation at the source/electrolyte and drain/electrolyte interfaces results in significant parasitic capacitance in EGTs which degrades dynamic switching performance. Parasitic capacitance in EGTs is reduced by covering the top surfaces of the source/drain electrodes with a low-ĸ dielectric (∼0.6 nF/cm2). The low-ĸ dielectric blocks EDL formation on the electrode surfaces that are in direct contact with the gate electrolyte, reducing the parasitic capacitance by a factor of 104 and providing a route to printed P3HT EGTs on plastic operating at switching frequencies exceeding 10 kHz with 1 V supply voltages.

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Printed, 1 V electrolyte-gated transistors based on poly(3-hexylthiophene) operating at >10 kHz on plastic

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