New method for determining flat-band voltage in high mobility semiconductors

Roy Winter; Jaesoo Ahn; Paul C. McIntyre; Moshe Eizenberg

doi:10.1116/1.4802478

New method for determining flat-band voltage in high mobility semiconductors

Roy Winter, Jaesoo Ahn, Paul C. McIntyre, Moshe Eizenberg

Research output: Contribution to journal › Article › peer-review

103 Scopus citations

Abstract

The method that is commonly used for determining the flat-band voltage (V_FB) and the flat-band capacitance (C_FB) of metal oxide semiconductor (MOS) capacitors depends on many parameters and can only be used in the case of low interface trap density (D_it) when the capacitance-voltage measurements are carried out at high frequencies. This paper demonstrates a new and simple method for determining V_FB and C _FB. The method is based on the point of inflection in the capacitance-voltage curve. This method does not require the knowledge of material or experimental parameters and can be used on high D_it and high border trap density MOS structures at all frequencies.

Original language	English
Article number	030604
Journal	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume	31
Issue number	3
DOIs	https://doi.org/10.1116/1.4802478
State	Published - May 2013
Externally published	Yes

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title = "New method for determining flat-band voltage in high mobility semiconductors",

abstract = "The method that is commonly used for determining the flat-band voltage (VFB) and the flat-band capacitance (CFB) of metal oxide semiconductor (MOS) capacitors depends on many parameters and can only be used in the case of low interface trap density (Dit) when the capacitance-voltage measurements are carried out at high frequencies. This paper demonstrates a new and simple method for determining VFB and C FB. The method is based on the point of inflection in the capacitance-voltage curve. This method does not require the knowledge of material or experimental parameters and can be used on high Dit and high border trap density MOS structures at all frequencies.",

author = "Roy Winter and Jaesoo Ahn and McIntyre, {Paul C.} and Moshe Eizenberg",

note = "Funding Information: The authors thank L. Kornblum for his contribution for this work and acknowledge support from the US-Israel Binational Science Foundation.",

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AU - Winter, Roy

AU - Ahn, Jaesoo

AU - McIntyre, Paul C.

AU - Eizenberg, Moshe

N1 - Funding Information: The authors thank L. Kornblum for his contribution for this work and acknowledge support from the US-Israel Binational Science Foundation.

PY - 2013/5

Y1 - 2013/5

N2 - The method that is commonly used for determining the flat-band voltage (VFB) and the flat-band capacitance (CFB) of metal oxide semiconductor (MOS) capacitors depends on many parameters and can only be used in the case of low interface trap density (Dit) when the capacitance-voltage measurements are carried out at high frequencies. This paper demonstrates a new and simple method for determining VFB and C FB. The method is based on the point of inflection in the capacitance-voltage curve. This method does not require the knowledge of material or experimental parameters and can be used on high Dit and high border trap density MOS structures at all frequencies.

AB - The method that is commonly used for determining the flat-band voltage (VFB) and the flat-band capacitance (CFB) of metal oxide semiconductor (MOS) capacitors depends on many parameters and can only be used in the case of low interface trap density (Dit) when the capacitance-voltage measurements are carried out at high frequencies. This paper demonstrates a new and simple method for determining VFB and C FB. The method is based on the point of inflection in the capacitance-voltage curve. This method does not require the knowledge of material or experimental parameters and can be used on high Dit and high border trap density MOS structures at all frequencies.

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New method for determining flat-band voltage in high mobility semiconductors

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