Nanoparticle formation via magnetron sputtering with inert gas aggregation

TY - CHAP

T1 - Nanoparticle formation via magnetron sputtering with inert gas aggregation

AU - Grammatikopoulos, Panagiotis

AU - Sowwan, Mukhles

N1 - Publisher Copyright: © 2017 Pan Stanford Publishing Pte. Ltd.

PY - 2017/1/1

Y1 - 2017/1/1

N2 - During the last part of the 20th century, the technological revolution of microelectronics meant that modern world industry and, consequently, global economy, would be increasingly dominated by silicon and its utilisation in electronic devices and integrated circuits. Therefore, it comes as no surprise that an overwhelming number of research studies published within the last decades had Si as a focal point, with both a basic science and an application perspective. With the advent of the nano era providing new opportunities to materials design, all challenges that the Si research community faced now have to be scaled down to the nanoscale.

AB - During the last part of the 20th century, the technological revolution of microelectronics meant that modern world industry and, consequently, global economy, would be increasingly dominated by silicon and its utilisation in electronic devices and integrated circuits. Therefore, it comes as no surprise that an overwhelming number of research studies published within the last decades had Si as a focal point, with both a basic science and an application perspective. With the advent of the nano era providing new opportunities to materials design, all challenges that the Si research community faced now have to be scaled down to the nanoscale.

UR - http://www.scopus.com/inward/record.url?scp=85054720862&partnerID=8YFLogxK

U2 - 10.1201/9781315364452

DO - 10.1201/9781315364452

M3 - 章节

AN - SCOPUS:85054720862

SN - 9789814745642

SP - 425

EP - 469

BT - Nanostructured Semiconductors

PB - Pan Stanford Publishing Pte. Ltd.

ER -