TY - GEN
T1 - Nano-enabled Metal Oxide Varistors for surge protection
AU - Tan, Daniel
AU - Younsi, Karim
AU - Zhou, Yingneng
AU - Cao, Yang
AU - Irwin, Patricia
PY - 2008
Y1 - 2008
N2 - Commercial Metal Oxide Varistor (MOV) devices provide a combination of high voltage, peak current, pulse energy absorption, and fast response speed. The non-uniformity and defects, however, may lead to relatively low voltage and energy dissipation, high leakage, low reliability and mechanical cracking. GE Global Research has been studying NanoMOV technology, and has been developing new formulations and processes. New compositions were invented to enable sintering at much lower temperatures, which exhibits improved I-V characteristics and microstructure uniformity. These compositions not only show high resistance at low fields and breakdown voltage (l-5kV/mm), but also a large α at high fields (50-140). The higher breakdown strength (>10x) compared to commercially available MOVs will enable MOV miniaturization, high voltage surge protection, and open up new areas of usage.
AB - Commercial Metal Oxide Varistor (MOV) devices provide a combination of high voltage, peak current, pulse energy absorption, and fast response speed. The non-uniformity and defects, however, may lead to relatively low voltage and energy dissipation, high leakage, low reliability and mechanical cracking. GE Global Research has been studying NanoMOV technology, and has been developing new formulations and processes. New compositions were invented to enable sintering at much lower temperatures, which exhibits improved I-V characteristics and microstructure uniformity. These compositions not only show high resistance at low fields and breakdown voltage (l-5kV/mm), but also a large α at high fields (50-140). The higher breakdown strength (>10x) compared to commercially available MOVs will enable MOV miniaturization, high voltage surge protection, and open up new areas of usage.
UR - http://www.scopus.com/inward/record.url?scp=62949185191&partnerID=8YFLogxK
U2 - 10.1109/IPMC.2008.4743575
DO - 10.1109/IPMC.2008.4743575
M3 - 会议稿件
AN - SCOPUS:62949185191
SN - 9781424415359
T3 - Proceedings of the 2008 IEEE International Power Modulators and High Voltage Conference, PMHVC
SP - 57
EP - 59
BT - Proceedings of the 2008 IEEE International Power Modulators and High Voltage Conference, PMHVC
T2 - 2008 IEEE International Power Modulators and High Voltage Conference, PMHVC
Y2 - 27 May 2008 through 31 May 2008
ER -