Mechanism of charge generation in p -type doped layer in the connection unit of tandem-type organic light-emitting devices

TY - JOUR

T1 - Mechanism of charge generation in p -type doped layer in the connection unit of tandem-type organic light-emitting devices

AU - Gao, X. D.

AU - Zhou, J.

AU - Xie, Z. T.

AU - Ding, B. F.

AU - Qian, Y. C.

AU - Ding, X. M.

AU - Hou, X. Y.

N1 - Funding Information: This work was supported by NSFC, MOST (973 project), and CAS Program for visiting Ph.D. students from universities in China.

PY - 2008

Y1 - 2008

N2 - A p -type doped organic layer combined with a hole-blocking layer has been experimentally demonstrated to serve as the charge generation unit in tandem-type organic light-emitting devices. The p -type layer functions as the source of both holes and electrons. Charge separation is explained by the tunneling model that the hole-blocking layer reduces the energy barrier for the electrons generated in the p -type layer to tunnel through into one light-emitting unit, while the holes generated in the p -type layer can transport to the other light-emitting unit easily under operation voltage.

AB - A p -type doped organic layer combined with a hole-blocking layer has been experimentally demonstrated to serve as the charge generation unit in tandem-type organic light-emitting devices. The p -type layer functions as the source of both holes and electrons. Charge separation is explained by the tunneling model that the hole-blocking layer reduces the energy barrier for the electrons generated in the p -type layer to tunnel through into one light-emitting unit, while the holes generated in the p -type layer can transport to the other light-emitting unit easily under operation voltage.

UR - http://www.scopus.com/inward/record.url?scp=51349095471&partnerID=8YFLogxK

U2 - 10.1063/1.2969293

DO - 10.1063/1.2969293

M3 - 文章

AN - SCOPUS:51349095471

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 083304

ER -