Kinetics and mechanism of periodic structure formation at SiO2/Mg interface

I. Gutman; I. Gotman; M. Shapiro

doi:10.1016/j.actamat.2006.05.048

Kinetics and mechanism of periodic structure formation at SiO₂/Mg interface

I. Gutman^*, I. Gotman, M. Shapiro

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

53 Scopus citations

Abstract

The interaction between SiO₂ (vitreous/fused silica and quartz) and Mg powder at 450-640 °C was investigated employing a combination of X-ray diffraction and scanning electron microscopy with energy dispersive spectroscopy. The interaction resulted in the formation of a periodic layered structure, consisting of alternating MgO and Mg₂Si-rich layers, with typical thickness of 0.5-3 μm. The reaction zone was found to grow by a parabolic law with activation energy of about 76 and 90 kJ/mol for fused silica/Mg and quartz/Mg interactions, respectively. The growth process is controlled by Mg diffusion to SiO₂ substrate. A qualitative model describing the formation of such a layered structure in the SiO₂/Mg system is presented.

Original language	English
Pages (from-to)	4677-4684
Number of pages	8
Journal	Acta Materialia
Volume	54
Issue number	18
DOIs	https://doi.org/10.1016/j.actamat.2006.05.048
State	Published - Oct 2006
Externally published	Yes

Keywords

Activation energy
Diffusion couple
Magnesium
Periodic layer formation
Silicon oxide

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10.1016/j.actamat.2006.05.048

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@article{c1b053cb74344e88b45df55d0f314fc7,

title = "Kinetics and mechanism of periodic structure formation at SiO2/Mg interface",

abstract = "The interaction between SiO2 (vitreous/fused silica and quartz) and Mg powder at 450-640 °C was investigated employing a combination of X-ray diffraction and scanning electron microscopy with energy dispersive spectroscopy. The interaction resulted in the formation of a periodic layered structure, consisting of alternating MgO and Mg2Si-rich layers, with typical thickness of 0.5-3 μm. The reaction zone was found to grow by a parabolic law with activation energy of about 76 and 90 kJ/mol for fused silica/Mg and quartz/Mg interactions, respectively. The growth process is controlled by Mg diffusion to SiO2 substrate. A qualitative model describing the formation of such a layered structure in the SiO2/Mg system is presented.",

keywords = "Activation energy, Diffusion couple, Magnesium, Periodic layer formation, Silicon oxide",

author = "I. Gutman and I. Gotman and M. Shapiro",

note = "Funding Information: The authors acknowledge the financial support of the Commission of the European Communities, Network of Excellence (EXCELL) No. 515703 and the Technion V.P.R. Fund–C. Wellner Research Fund.",

year = "2006",

month = oct,

doi = "10.1016/j.actamat.2006.05.048",

language = "英语",

volume = "54",

pages = "4677--4684",

journal = "Acta Materialia",

issn = "1359-6454",

publisher = "Elsevier Ltd.",

number = "18",

}

TY - JOUR

T1 - Kinetics and mechanism of periodic structure formation at SiO2/Mg interface

AU - Gutman, I.

AU - Gotman, I.

AU - Shapiro, M.

N1 - Funding Information: The authors acknowledge the financial support of the Commission of the European Communities, Network of Excellence (EXCELL) No. 515703 and the Technion V.P.R. Fund–C. Wellner Research Fund.

PY - 2006/10

Y1 - 2006/10

N2 - The interaction between SiO2 (vitreous/fused silica and quartz) and Mg powder at 450-640 °C was investigated employing a combination of X-ray diffraction and scanning electron microscopy with energy dispersive spectroscopy. The interaction resulted in the formation of a periodic layered structure, consisting of alternating MgO and Mg2Si-rich layers, with typical thickness of 0.5-3 μm. The reaction zone was found to grow by a parabolic law with activation energy of about 76 and 90 kJ/mol for fused silica/Mg and quartz/Mg interactions, respectively. The growth process is controlled by Mg diffusion to SiO2 substrate. A qualitative model describing the formation of such a layered structure in the SiO2/Mg system is presented.

AB - The interaction between SiO2 (vitreous/fused silica and quartz) and Mg powder at 450-640 °C was investigated employing a combination of X-ray diffraction and scanning electron microscopy with energy dispersive spectroscopy. The interaction resulted in the formation of a periodic layered structure, consisting of alternating MgO and Mg2Si-rich layers, with typical thickness of 0.5-3 μm. The reaction zone was found to grow by a parabolic law with activation energy of about 76 and 90 kJ/mol for fused silica/Mg and quartz/Mg interactions, respectively. The growth process is controlled by Mg diffusion to SiO2 substrate. A qualitative model describing the formation of such a layered structure in the SiO2/Mg system is presented.

KW - Activation energy

KW - Diffusion couple

KW - Magnesium

KW - Periodic layer formation

KW - Silicon oxide

UR - http://www.scopus.com/inward/record.url?scp=33748986917&partnerID=8YFLogxK

U2 - 10.1016/j.actamat.2006.05.048

DO - 10.1016/j.actamat.2006.05.048

M3 - 文章

AN - SCOPUS:33748986917

SN - 1359-6454

VL - 54

SP - 4677

EP - 4684

JO - Acta Materialia

JF - Acta Materialia

IS - 18

ER -

Kinetics and mechanism of periodic structure formation at SiO₂/Mg interface

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Keywords

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