Abstract
Film morphologies and ionic migration are investigated for anodic oxides formed galvanostatically on electropolished aluminum in selenate electrolyte. Anionic selenium species that migrate at ∼0.2 to 0.3 times the rate of O2- ions were present in barrier films. Further, porous films could be generated by the use of sputtering-deposited aluminum substrates, although the film thickness is limited to ∼70 nm. Re-anodizing in pentaborate electrolyte at high efficiency revealed also a cationic selenium species that migrates at ∼0.6 to 0.7 times the rate of Al3+ ions, suggesting that the migration of selenium is affected by the morphology and growth mechanism of the film.
Original language | English |
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Pages (from-to) | C312-C317 |
Journal | Journal of the Electrochemical Society |
Volume | 159 |
Issue number | 7 |
DOIs | |
State | Published - 2012 |
Externally published | Yes |