Intrinsic electron traps in atomic-layer deposited HfO2 insulators

F. Cerbu; O. Madia; D. V. Andreev; S. Fadida; M. Eizenberg; L. Breuil; J. G. Lisoni; J. A. Kittl; J. Strand; A. L. Shluger; V. V. Afanas'Ev; M. Houssa; A. Stesmans

doi:10.1063/1.4952718

Intrinsic electron traps in atomic-layer deposited HfO₂ insulators

F. Cerbu, O. Madia, D. V. Andreev, S. Fadida, M. Eizenberg, L. Breuil, J. G. Lisoni, J. A. Kittl, J. Strand, A. L. Shluger, V. V. Afanas'Ev, M. Houssa, A. Stesmans

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43 Scopus citations

Abstract

Analysis of photodepopulation of electron traps in HfO₂ films grown by atomic layer deposition is shown to provide the trap energy distribution across the entire oxide bandgap. The presence is revealed of two kinds of deep electron traps energetically distributed at around E_t 2.0 eV and E_t 3.0 eV below the oxide conduction band. Comparison of the trapped electron energy distributions in HfO₂ layers prepared using different precursors or subjected to thermal treatment suggests that these centers are intrinsic in origin. However, the common assumption that these would implicate O vacancies cannot explain the charging behavior of HfO₂, suggesting that alternative defect models should be considered.

Original language	English
Article number	222901
Journal	Applied Physics Letters
Volume	108
Issue number	22
DOIs	https://doi.org/10.1063/1.4952718
State	Published - 30 May 2016
Externally published	Yes

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title = "Intrinsic electron traps in atomic-layer deposited HfO2 insulators",

abstract = "Analysis of photodepopulation of electron traps in HfO2 films grown by atomic layer deposition is shown to provide the trap energy distribution across the entire oxide bandgap. The presence is revealed of two kinds of deep electron traps energetically distributed at around Et 2.0 eV and Et 3.0 eV below the oxide conduction band. Comparison of the trapped electron energy distributions in HfO2 layers prepared using different precursors or subjected to thermal treatment suggests that these centers are intrinsic in origin. However, the common assumption that these would implicate O vacancies cannot explain the charging behavior of HfO2, suggesting that alternative defect models should be considered.",

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doi = "10.1063/1.4952718",

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T1 - Intrinsic electron traps in atomic-layer deposited HfO2 insulators

AU - Cerbu, F.

AU - Madia, O.

AU - Andreev, D. V.

AU - Fadida, S.

AU - Eizenberg, M.

AU - Breuil, L.

AU - Lisoni, J. G.

AU - Kittl, J. A.

AU - Strand, J.

AU - Shluger, A. L.

AU - Afanas'Ev, V. V.

AU - Houssa, M.

AU - Stesmans, A.

PY - 2016/5/30

Y1 - 2016/5/30

N2 - Analysis of photodepopulation of electron traps in HfO2 films grown by atomic layer deposition is shown to provide the trap energy distribution across the entire oxide bandgap. The presence is revealed of two kinds of deep electron traps energetically distributed at around Et 2.0 eV and Et 3.0 eV below the oxide conduction band. Comparison of the trapped electron energy distributions in HfO2 layers prepared using different precursors or subjected to thermal treatment suggests that these centers are intrinsic in origin. However, the common assumption that these would implicate O vacancies cannot explain the charging behavior of HfO2, suggesting that alternative defect models should be considered.

AB - Analysis of photodepopulation of electron traps in HfO2 films grown by atomic layer deposition is shown to provide the trap energy distribution across the entire oxide bandgap. The presence is revealed of two kinds of deep electron traps energetically distributed at around Et 2.0 eV and Et 3.0 eV below the oxide conduction band. Comparison of the trapped electron energy distributions in HfO2 layers prepared using different precursors or subjected to thermal treatment suggests that these centers are intrinsic in origin. However, the common assumption that these would implicate O vacancies cannot explain the charging behavior of HfO2, suggesting that alternative defect models should be considered.

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DO - 10.1063/1.4952718

M3 - 文章

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VL - 108

JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Intrinsic electron traps in atomic-layer deposited HfO₂ insulators

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