TY - JOUR
T1 - Interfacial processes in the Pd/a-Ge:H system
AU - Edelman, F.
AU - Cytermann, C.
AU - Brener, R.
AU - Eizenberg, M.
AU - Weil, R.
AU - Beyer, W.
N1 - Funding Information:
This researchw as supportedin part by a Grant from the national Council for Research and De-
PY - 1993/6/2
Y1 - 1993/6/2
N2 - The kinetics of phase transformation has been studied in a two-layer structure of Pd/a-Ge:H after vacuum annealing at temperatures from 180 to 500°C. The a-Ge:H was deposited at 250°C on both c-Si and cleaved NaCl substrates in an RF glow discharge from a GeH4/H2 mixture. It was found that, similarly to the Pd/c-Ge and the Pd/a-Ge (e-gun deposited) systems, in the case of 0.15-0.2 μm Pd/0.6-1.0 μm a-Ge:H interfacial germanides formed first through the production of Pd2Ge (plus a small amount of PdGe), and then PdGe was produced. The growth of both compounds was found to be diffusion-controlled. The nonreacted a-Ge:H layer beneath the germanide overlayer crystallized at 400-500°C. A reverse sequence of germanides formation was revealed in the case of 50 nm Pd/30 nm a-Ge:H, studied by in situ heat treatment in the TEM utilizing non-supported samples. The first germanide detected was PdGe and then, as a result of PdGe and Ge reaction or the PdGe decomposition, Pd2Ge formed. The temperature dependence of the incubation time before the first ∼ 10 nm PdGe grains formed, followed an Arrhenius curve with an activation energy of 1.45 eV.
AB - The kinetics of phase transformation has been studied in a two-layer structure of Pd/a-Ge:H after vacuum annealing at temperatures from 180 to 500°C. The a-Ge:H was deposited at 250°C on both c-Si and cleaved NaCl substrates in an RF glow discharge from a GeH4/H2 mixture. It was found that, similarly to the Pd/c-Ge and the Pd/a-Ge (e-gun deposited) systems, in the case of 0.15-0.2 μm Pd/0.6-1.0 μm a-Ge:H interfacial germanides formed first through the production of Pd2Ge (plus a small amount of PdGe), and then PdGe was produced. The growth of both compounds was found to be diffusion-controlled. The nonreacted a-Ge:H layer beneath the germanide overlayer crystallized at 400-500°C. A reverse sequence of germanides formation was revealed in the case of 50 nm Pd/30 nm a-Ge:H, studied by in situ heat treatment in the TEM utilizing non-supported samples. The first germanide detected was PdGe and then, as a result of PdGe and Ge reaction or the PdGe decomposition, Pd2Ge formed. The temperature dependence of the incubation time before the first ∼ 10 nm PdGe grains formed, followed an Arrhenius curve with an activation energy of 1.45 eV.
UR - http://www.scopus.com/inward/record.url?scp=0027905823&partnerID=8YFLogxK
U2 - 10.1016/0169-4332(93)90609-F
DO - 10.1016/0169-4332(93)90609-F
M3 - 文章
AN - SCOPUS:0027905823
SN - 0169-4332
VL - 70-71
SP - 722
EP - 726
JO - Applied Surface Science
JF - Applied Surface Science
IS - PART 2
ER -