Interaction of Pd with strained layers of Si1-xGex epitaxially grown on Si(100)

A. Buxbaum; M. Eizenberg; A. Raizman; F. Schaffler

doi:10.7567/ssdm.1991.a-4-3

Interaction of Pd with strained layers of Si_1-xGe_x epitaxially grown on Si(100)

A. Buxbaum^*, M. Eizenberg, A. Raizman, F. Schaffler

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

Abstract

The interaction of thin Pd films deposited on strained layers of Si_1-xGe_x epitaxially grown on Si(100) was studied. A highly textured, ternary compound (Pd₂Si_1-yGe_y) formed concurrently with the PdGe phase, at annealing temperatures between 200 and 550°C. Above 550°C, a region of high Ge concentration formed between the fully reacted compound region and the unreacted Si_1-xGe_x layer. Current-voltage investigations showed that Pd on Si_1-xGe_x samples have a lower Schottky barrier height than Pd on pure Si.

Original language	English
Pages	144-146
Number of pages	3
DOIs	https://doi.org/10.7567/ssdm.1991.a-4-3
State	Published - 1991
Externally published	Yes
Event	23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn Duration: 27 Aug 1991 → 29 Aug 1991

Conference

Conference	23rd International Conference on Solid State Devices and Materials - SSDM '91
City	Yokohama, Jpn
Period	27/08/91 → 29/08/91

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10.7567/ssdm.1991.a-4-3

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title = "Interaction of Pd with strained layers of Si1-xGex epitaxially grown on Si(100)",

abstract = "The interaction of thin Pd films deposited on strained layers of Si1-xGex epitaxially grown on Si(100) was studied. A highly textured, ternary compound (Pd2Si1-yGey) formed concurrently with the PdGe phase, at annealing temperatures between 200 and 550°C. Above 550°C, a region of high Ge concentration formed between the fully reacted compound region and the unreacted Si1-xGex layer. Current-voltage investigations showed that Pd on Si1-xGex samples have a lower Schottky barrier height than Pd on pure Si.",

author = "A. Buxbaum and M. Eizenberg and A. Raizman and F. Schaffler",

year = "1991",

doi = "10.7567/ssdm.1991.a-4-3",

language = "英语",

pages = "144--146",

note = "23rd International Conference on Solid State Devices and Materials - SSDM '91 ; Conference date: 27-08-1991 Through 29-08-1991",

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TY - CONF

T1 - Interaction of Pd with strained layers of Si1-xGex epitaxially grown on Si(100)

AU - Buxbaum, A.

AU - Eizenberg, M.

AU - Raizman, A.

AU - Schaffler, F.

PY - 1991

Y1 - 1991

N2 - The interaction of thin Pd films deposited on strained layers of Si1-xGex epitaxially grown on Si(100) was studied. A highly textured, ternary compound (Pd2Si1-yGey) formed concurrently with the PdGe phase, at annealing temperatures between 200 and 550°C. Above 550°C, a region of high Ge concentration formed between the fully reacted compound region and the unreacted Si1-xGex layer. Current-voltage investigations showed that Pd on Si1-xGex samples have a lower Schottky barrier height than Pd on pure Si.

AB - The interaction of thin Pd films deposited on strained layers of Si1-xGex epitaxially grown on Si(100) was studied. A highly textured, ternary compound (Pd2Si1-yGey) formed concurrently with the PdGe phase, at annealing temperatures between 200 and 550°C. Above 550°C, a region of high Ge concentration formed between the fully reacted compound region and the unreacted Si1-xGex layer. Current-voltage investigations showed that Pd on Si1-xGex samples have a lower Schottky barrier height than Pd on pure Si.

UR - http://www.scopus.com/inward/record.url?scp=0025748990&partnerID=8YFLogxK

U2 - 10.7567/ssdm.1991.a-4-3

DO - 10.7567/ssdm.1991.a-4-3

M3 - 论文

AN - SCOPUS:0025748990

SP - 144

EP - 146

T2 - 23rd International Conference on Solid State Devices and Materials - SSDM '91

Y2 - 27 August 1991 through 29 August 1991

ER -

Interaction of Pd with strained layers of Si_1-xGe_x epitaxially grown on Si(100)

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