Abstract
In this work, the influence of the oxide-semiconductor interface on the resistive switching phenomenon was studied in metal gates /Al2O 3/InGaAs structures. Different sets of samples were manufactured to produce different qualities of oxide-semiconductor interfaces. The influence of the Al2O3/InGaAs interface on the resistive switching effect was studied by combining electrical characterizations with an analysis of the composition of the oxide/semiconductor interface. The results suggest that a low surface quality results in a decrease of the damage on the conductive filament responsible for the transitions between two resistive states.
Original language | English |
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Pages (from-to) | 56-60 |
Number of pages | 5 |
Journal | Solid-State Electronics |
Volume | 93 |
DOIs | |
State | Published - Mar 2014 |
Externally published | Yes |
Keywords
- InGaAs
- Interface states
- Resistive switching