Growth mechanisms of silicon films produced by laser-induced chemical vapor deposition

TY - JOUR

T1 - Growth mechanisms of silicon films produced by laser-induced chemical vapor deposition

AU - Tamir, S.

AU - Komem, Y.

AU - Eizenberg, M.

AU - Zahavi, J.

N1 - Funding Information: The authors wish to thank the Israeli Academy for Science for their partial financial support. One of the authors (YK) would like to thank the fund for promotion of research at the technion for partial support.

PY - 1995/6/1

Y1 - 1995/6/1

N2 - We have studied chemical vapor deposition (CVD) of Si from an SiH4 + Ar mixture, using excimer laser beam excitation parallel to a Si substrate. The growth mechanisms were studied by analyzing the effects of the temperature, pressure, laser repetition rate and intensity on the deposition rate and on the film microstructure. In addition, absorption measurements and gas analysis were performed during the deposition. This paper discusses the results of thickness measurements and calculations of the activation energy. A Gaussian-shaped transverse thickness distribution was obtained with a maximum corresponding to the center of the laser beam. This distribution depended on the deposition parameters and was attributed to the diffusion process of the silane decomposition products in the gas phase to the substrate. An Arrhenius plot of the deposition rate vs. the substrate temperature could be divided into two regimes associated with different activation energies. Between 340 and 460 °C, the activation energy is 0.25-0.3 eV, while it is 1.1 eV between 500 and 560 °C. The activation energy in the higher temperature regime is similar to that found for thermal CVD without the use of a laser. However, in the lower temperature regime, the deposition process is mainly laser induced, and the value of the activation energy was attributed to the process of adsorption of the gas species onto the substrate.

AB - We have studied chemical vapor deposition (CVD) of Si from an SiH4 + Ar mixture, using excimer laser beam excitation parallel to a Si substrate. The growth mechanisms were studied by analyzing the effects of the temperature, pressure, laser repetition rate and intensity on the deposition rate and on the film microstructure. In addition, absorption measurements and gas analysis were performed during the deposition. This paper discusses the results of thickness measurements and calculations of the activation energy. A Gaussian-shaped transverse thickness distribution was obtained with a maximum corresponding to the center of the laser beam. This distribution depended on the deposition parameters and was attributed to the diffusion process of the silane decomposition products in the gas phase to the substrate. An Arrhenius plot of the deposition rate vs. the substrate temperature could be divided into two regimes associated with different activation energies. Between 340 and 460 °C, the activation energy is 0.25-0.3 eV, while it is 1.1 eV between 500 and 560 °C. The activation energy in the higher temperature regime is similar to that found for thermal CVD without the use of a laser. However, in the lower temperature regime, the deposition process is mainly laser induced, and the value of the activation energy was attributed to the process of adsorption of the gas species onto the substrate.

KW - Deposition process

KW - Laser ablation

KW - Silane

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=0029327818&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(94)06485-7

DO - 10.1016/S0040-6090(94)06485-7

M3 - 文章

AN - SCOPUS:0029327818

SN - 0040-6090

VL - 261

SP - 251

EP - 255

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -