@article{aae421b74bfc48b39774d71e1c91b712,
title = "Fermi level tuning using the Hf-Ni alloy system as a gate electrode in metal-oxide-semiconductor devices",
abstract = "Hf-Ni alloys are studied as a gate electrode for metal-oxide-semiconductor devices. The Hf-Ni solid-state amorphization couple encompasses several metallurgical phenomena which are investigated at the nanoscale and are correlated with the macroscopic electrical properties of devices. The dependence of the Fermi level position on the alloy composition is studied both on SiO 2 and on HfO 2. In order to isolate the effects of interfacial and dielectric charges and dipoles, the dependence of the vacuum work-function values on the composition is also studied. The Fermi level positions of the alloys do not depend linearly on the average composition of the alloys and are strongly affected by Hf enrichment at the HfNi x/dielectric interface and the HfNi x surface. We note a constant shift of 0.4 eV in the Fermi level position on HfO 2 compared to SiO 2. In addition, characterization of the composition, structure, and morphology reveals Kirkendall voids formation when the bottom layer consists of Ni, and an oxygen-scavenging effect when the bottom layer is Hf.",
author = "{Avner Rothschild}, Jonathan and Aya Cohen and Anna Brusilovsky and Lior Kornblum and Yaron Kauffmann and Yaron Amouyal and Moshe Eizenberg",
note = "Funding Information: Y.A. acknowledges the Marie Curie IOF support under the 7th framework program of the Commission of the European Community, Contract No. 221143. Helpful discussions of Y.A. with Dr. Zugang Mao of Northwestern University (Evanston, IL, USA) and with Dr. Ren{\'e} Windiks of Materials Design Inc. are greatly appreciated. Funding Information: We acknowledge the support of ALPHA consortium (Israel Ministry of Industry and Trade) and the Russell Berrie Nanotechnology Institute at Technion. We thank C. Cytermann from the Solid State Institute for ToF-SIMS measurements, Dr. B. Meyler from the Microelectronics Research Center for the HfO deposition, and A. Shai from the Microelectronics Research Center for support with the e-gun evaporation. We thank Dr. T. Cohen-Hyams for the preparation of the TEM samples using FIB and to R. Winter for the preparation of the conventional TEM samples. We thank Y. Moses for constructing the in situ KP chamber and Dr. G. Frant for operating the sputtering chamber. 2 ",
year = "2012",
month = jul,
day = "1",
doi = "10.1063/1.4730618",
language = "英语",
volume = "112",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics",
number = "1",
}