Epitaxial NiInGaAs formed by solid state reaction on In 0.53Ga0.47As: Structural and chemical study

Pini Shekhter; Shlomo Mehari; Dan Ritter; Moshe Eizenberg

doi:10.1116/1.4802917

Epitaxial NiInGaAs formed by solid state reaction on In _0.53Ga_0.47As: Structural and chemical study

Pini Shekhter^*, Shlomo Mehari, Dan Ritter, Moshe Eizenberg

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Thin epitaxial layers of NiInGaAs formed by solid state reaction of Ni on (100) In_0.53Ga_0.47As are used as metal source and drain regions for In_0.53Ga_0.47As metal oxide field effect transistors. Here, the authors present a structural and chemical analysis of this phase. The stoichiometry of the layer was determined as Ni ₂In_0.53Ga_0.47As. Transmission electron microscopy revealed an abrupt interface and a detailed x-ray diffraction analysis showed that the layer is of a hexagonal lattice, which grows epitaxially with the orientation relations of 00 InGaAs 100 NiInGaAs; 01 1 ̄ InGaAs 001 NiInGaAs. Only one domain can be observed in this epitaxial growth. Understanding the structure of these layers is a crucial step not only in their incorporation into InGaAs based devices but also a step toward novel devices.

Original language	English
Article number	031205
Journal	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume	31
Issue number	3
DOIs	https://doi.org/10.1116/1.4802917
State	Published - May 2013
Externally published	Yes

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title = "Epitaxial NiInGaAs formed by solid state reaction on In 0.53Ga0.47As: Structural and chemical study",

abstract = "Thin epitaxial layers of NiInGaAs formed by solid state reaction of Ni on (100) In0.53Ga0.47As are used as metal source and drain regions for In0.53Ga0.47As metal oxide field effect transistors. Here, the authors present a structural and chemical analysis of this phase. The stoichiometry of the layer was determined as Ni 2In0.53Ga0.47As. Transmission electron microscopy revealed an abrupt interface and a detailed x-ray diffraction analysis showed that the layer is of a hexagonal lattice, which grows epitaxially with the orientation relations of 00 InGaAs 100 NiInGaAs; 01 1{\= } InGaAs 001 NiInGaAs. Only one domain can be observed in this epitaxial growth. Understanding the structure of these layers is a crucial step not only in their incorporation into InGaAs based devices but also a step toward novel devices.",

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T2 - Structural and chemical study

AU - Shekhter, Pini

AU - Mehari, Shlomo

AU - Ritter, Dan

AU - Eizenberg, Moshe

PY - 2013/5

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N2 - Thin epitaxial layers of NiInGaAs formed by solid state reaction of Ni on (100) In0.53Ga0.47As are used as metal source and drain regions for In0.53Ga0.47As metal oxide field effect transistors. Here, the authors present a structural and chemical analysis of this phase. The stoichiometry of the layer was determined as Ni 2In0.53Ga0.47As. Transmission electron microscopy revealed an abrupt interface and a detailed x-ray diffraction analysis showed that the layer is of a hexagonal lattice, which grows epitaxially with the orientation relations of 00 InGaAs 100 NiInGaAs; 01 1 ̄ InGaAs 001 NiInGaAs. Only one domain can be observed in this epitaxial growth. Understanding the structure of these layers is a crucial step not only in their incorporation into InGaAs based devices but also a step toward novel devices.

AB - Thin epitaxial layers of NiInGaAs formed by solid state reaction of Ni on (100) In0.53Ga0.47As are used as metal source and drain regions for In0.53Ga0.47As metal oxide field effect transistors. Here, the authors present a structural and chemical analysis of this phase. The stoichiometry of the layer was determined as Ni 2In0.53Ga0.47As. Transmission electron microscopy revealed an abrupt interface and a detailed x-ray diffraction analysis showed that the layer is of a hexagonal lattice, which grows epitaxially with the orientation relations of 00 InGaAs 100 NiInGaAs; 01 1 ̄ InGaAs 001 NiInGaAs. Only one domain can be observed in this epitaxial growth. Understanding the structure of these layers is a crucial step not only in their incorporation into InGaAs based devices but also a step toward novel devices.

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Epitaxial NiInGaAs formed by solid state reaction on In _0.53Ga_0.47As: Structural and chemical study

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