Elimination of the weak inversion hump in Si3N 4/InGaAs (001) gate stacks using an in situ NH3 pre-treatment

Igor Krylov; Arkady Gavrilov; Dan Ritter; Moshe Eizenberg

doi:10.1063/1.3662035

Elimination of the weak inversion hump in Si₃N ₄/InGaAs (001) gate stacks using an in situ NH₃ pre-treatment

Igor Krylov^*, Arkady Gavrilov, Dan Ritter, Moshe Eizenberg

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Silicon nitride thin films were deposited by plasma enhanced chemical vapor deposition on In_0.53Ga_0.47As (001) surfaces with and without NH₃ pre-deposition treatments. The influence of the NH ₃ pre-deposition treatments on the electrical properties of the Si₃N₄/In_0.53Ga_0.47As interface was investigated by frequency dependent capacitance-voltage and conductance-voltage measurements. A fully unpinned C-V behavior was obtained for all samples. Samples that underwent NH₃ pre-deposition treatment exhibited electrical characteristics with no evidence of the midgap interface states (D_it) effects in weak inversion, which are reported in the literature on In_0.53Ga_0.47As capacitors.

Original language	English
Article number	203504
Journal	Applied Physics Letters
Volume	99
Issue number	20
DOIs	https://doi.org/10.1063/1.3662035
State	Published - 14 Nov 2011
Externally published	Yes

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title = "Elimination of the weak inversion hump in Si3N 4/InGaAs (001) gate stacks using an in situ NH3 pre-treatment",

abstract = "Silicon nitride thin films were deposited by plasma enhanced chemical vapor deposition on In0.53Ga0.47As (001) surfaces with and without NH3 pre-deposition treatments. The influence of the NH 3 pre-deposition treatments on the electrical properties of the Si3N4/In0.53Ga0.47As interface was investigated by frequency dependent capacitance-voltage and conductance-voltage measurements. A fully unpinned C-V behavior was obtained for all samples. Samples that underwent NH3 pre-deposition treatment exhibited electrical characteristics with no evidence of the midgap interface states (Dit) effects in weak inversion, which are reported in the literature on In0.53Ga0.47As capacitors.",

author = "Igor Krylov and Arkady Gavrilov and Dan Ritter and Moshe Eizenberg",

note = "Funding Information: This study was supported by the Russell Berrie Nanotechnology Institute (RBNI) at the Technion.",

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doi = "10.1063/1.3662035",

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T1 - Elimination of the weak inversion hump in Si3N 4/InGaAs (001) gate stacks using an in situ NH3 pre-treatment

AU - Krylov, Igor

AU - Gavrilov, Arkady

AU - Ritter, Dan

AU - Eizenberg, Moshe

N1 - Funding Information: This study was supported by the Russell Berrie Nanotechnology Institute (RBNI) at the Technion.

PY - 2011/11/14

Y1 - 2011/11/14

N2 - Silicon nitride thin films were deposited by plasma enhanced chemical vapor deposition on In0.53Ga0.47As (001) surfaces with and without NH3 pre-deposition treatments. The influence of the NH 3 pre-deposition treatments on the electrical properties of the Si3N4/In0.53Ga0.47As interface was investigated by frequency dependent capacitance-voltage and conductance-voltage measurements. A fully unpinned C-V behavior was obtained for all samples. Samples that underwent NH3 pre-deposition treatment exhibited electrical characteristics with no evidence of the midgap interface states (Dit) effects in weak inversion, which are reported in the literature on In0.53Ga0.47As capacitors.

AB - Silicon nitride thin films were deposited by plasma enhanced chemical vapor deposition on In0.53Ga0.47As (001) surfaces with and without NH3 pre-deposition treatments. The influence of the NH 3 pre-deposition treatments on the electrical properties of the Si3N4/In0.53Ga0.47As interface was investigated by frequency dependent capacitance-voltage and conductance-voltage measurements. A fully unpinned C-V behavior was obtained for all samples. Samples that underwent NH3 pre-deposition treatment exhibited electrical characteristics with no evidence of the midgap interface states (Dit) effects in weak inversion, which are reported in the literature on In0.53Ga0.47As capacitors.

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U2 - 10.1063/1.3662035

DO - 10.1063/1.3662035

M3 - 文章

AN - SCOPUS:81855187131

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

M1 - 203504

ER -

Elimination of the weak inversion hump in Si₃N ₄/InGaAs (001) gate stacks using an in situ NH₃ pre-treatment

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