Effects of Titanium Layer Oxygen Scavenging on the High-k/InGaAs Interface

Roy Winter; Pini Shekhter; Kechao Tang; Luca Floreano; Alberto Verdini; Paul C. McIntyre; Moshe Eizenberg

doi:10.1021/acsami.6b02957

Effects of Titanium Layer Oxygen Scavenging on the High-k/InGaAs Interface

Roy Winter^*, Pini Shekhter, Kechao Tang, Luca Floreano, Alberto Verdini, Paul C. McIntyre, Moshe Eizenberg

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

One of the main challenges in the path to incorporating InGaAs based metal-oxide-semiconductor structures in nanoelectronics is the passivation of high-k/InGaAs interfaces. Here, the oxygen scavenging effect of thin Ti layers on high-k/InGaAs gate stacks was studied. Electrical measurements and synchrotron X-ray photoelectron spectroscopy measurements, with in situ metal deposition, were used. Oxygen removal from the InGaAs native oxide surface layer remotely through interposed Al₂O₃ and HfO₂ layers observed. Synchrotron X-ray photoelectron spectroscopy has revealed a decrease in the intensity of InO_x features relative to In in InGaAs after Ti deposition. The signal ratio decreases further after annealing. In addition, Ti 2p spectra clearly show oxidation of the thin Ti layer in the ultrahigh vacuum XPS environment. Using capacitance-voltage and conductance-voltage measurements, Pt/Ti/Al₂O₃/InGaAs and Pt/Al₂O₃/InGaAs capacitors were characterized both before and after annealing. It was found that the remote oxygen scavenging from the oxide/semiconductor interface using a thin Ti layer can influence the density of interface traps in the high-k/InGaAs interface.

Original language	English
Pages (from-to)	16979-16984
Number of pages	6
Journal	ACS applied materials & interfaces
Volume	8
Issue number	26
DOIs	https://doi.org/10.1021/acsami.6b02957
State	Published - 6 Jul 2016
Externally published	Yes

Keywords

InGaAs
MOS
XPS
high-k
high-mobility
metal-oxide-semiconductor
scavenging
synchrotron

Access to Document

10.1021/acsami.6b02957

Cite this

@article{cdf0c2dd98144d2d8aa622053e201418,

title = "Effects of Titanium Layer Oxygen Scavenging on the High-k/InGaAs Interface",

abstract = "One of the main challenges in the path to incorporating InGaAs based metal-oxide-semiconductor structures in nanoelectronics is the passivation of high-k/InGaAs interfaces. Here, the oxygen scavenging effect of thin Ti layers on high-k/InGaAs gate stacks was studied. Electrical measurements and synchrotron X-ray photoelectron spectroscopy measurements, with in situ metal deposition, were used. Oxygen removal from the InGaAs native oxide surface layer remotely through interposed Al2O3 and HfO2 layers observed. Synchrotron X-ray photoelectron spectroscopy has revealed a decrease in the intensity of InOx features relative to In in InGaAs after Ti deposition. The signal ratio decreases further after annealing. In addition, Ti 2p spectra clearly show oxidation of the thin Ti layer in the ultrahigh vacuum XPS environment. Using capacitance-voltage and conductance-voltage measurements, Pt/Ti/Al2O3/InGaAs and Pt/Al2O3/InGaAs capacitors were characterized both before and after annealing. It was found that the remote oxygen scavenging from the oxide/semiconductor interface using a thin Ti layer can influence the density of interface traps in the high-k/InGaAs interface.",

keywords = "InGaAs, MOS, XPS, high-k, high-mobility, metal-oxide-semiconductor, scavenging, synchrotron",

author = "Roy Winter and Pini Shekhter and Kechao Tang and Luca Floreano and Alberto Verdini and McIntyre, {Paul C.} and Moshe Eizenberg",

note = "Publisher Copyright: {\textcopyright} 2016 American Chemical Society.",

year = "2016",

month = jul,

day = "6",

doi = "10.1021/acsami.6b02957",

language = "英语",

volume = "8",

pages = "16979--16984",

journal = "ACS applied materials & interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

number = "26",

}

TY - JOUR

T1 - Effects of Titanium Layer Oxygen Scavenging on the High-k/InGaAs Interface

AU - Winter, Roy

AU - Shekhter, Pini

AU - Tang, Kechao

AU - Floreano, Luca

AU - Verdini, Alberto

AU - McIntyre, Paul C.

AU - Eizenberg, Moshe

PY - 2016/7/6

Y1 - 2016/7/6

N2 - One of the main challenges in the path to incorporating InGaAs based metal-oxide-semiconductor structures in nanoelectronics is the passivation of high-k/InGaAs interfaces. Here, the oxygen scavenging effect of thin Ti layers on high-k/InGaAs gate stacks was studied. Electrical measurements and synchrotron X-ray photoelectron spectroscopy measurements, with in situ metal deposition, were used. Oxygen removal from the InGaAs native oxide surface layer remotely through interposed Al2O3 and HfO2 layers observed. Synchrotron X-ray photoelectron spectroscopy has revealed a decrease in the intensity of InOx features relative to In in InGaAs after Ti deposition. The signal ratio decreases further after annealing. In addition, Ti 2p spectra clearly show oxidation of the thin Ti layer in the ultrahigh vacuum XPS environment. Using capacitance-voltage and conductance-voltage measurements, Pt/Ti/Al2O3/InGaAs and Pt/Al2O3/InGaAs capacitors were characterized both before and after annealing. It was found that the remote oxygen scavenging from the oxide/semiconductor interface using a thin Ti layer can influence the density of interface traps in the high-k/InGaAs interface.

AB - One of the main challenges in the path to incorporating InGaAs based metal-oxide-semiconductor structures in nanoelectronics is the passivation of high-k/InGaAs interfaces. Here, the oxygen scavenging effect of thin Ti layers on high-k/InGaAs gate stacks was studied. Electrical measurements and synchrotron X-ray photoelectron spectroscopy measurements, with in situ metal deposition, were used. Oxygen removal from the InGaAs native oxide surface layer remotely through interposed Al2O3 and HfO2 layers observed. Synchrotron X-ray photoelectron spectroscopy has revealed a decrease in the intensity of InOx features relative to In in InGaAs after Ti deposition. The signal ratio decreases further after annealing. In addition, Ti 2p spectra clearly show oxidation of the thin Ti layer in the ultrahigh vacuum XPS environment. Using capacitance-voltage and conductance-voltage measurements, Pt/Ti/Al2O3/InGaAs and Pt/Al2O3/InGaAs capacitors were characterized both before and after annealing. It was found that the remote oxygen scavenging from the oxide/semiconductor interface using a thin Ti layer can influence the density of interface traps in the high-k/InGaAs interface.

KW - InGaAs

KW - MOS

KW - XPS

KW - high-k

KW - high-mobility

KW - metal-oxide-semiconductor

KW - scavenging

KW - synchrotron

UR - http://www.scopus.com/inward/record.url?scp=84977663153&partnerID=8YFLogxK

U2 - 10.1021/acsami.6b02957

DO - 10.1021/acsami.6b02957

M3 - 文章

AN - SCOPUS:84977663153

SN - 1944-8244

VL - 8

SP - 16979

EP - 16984

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

IS - 26

ER -

Effects of Titanium Layer Oxygen Scavenging on the High-k/InGaAs Interface

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this