Effect of substrate temperature on the formation of shallow silicide contacts on Si using Pd-W and Pt-W alloys

TY - JOUR

T1 - Effect of substrate temperature on the formation of shallow silicide contacts on Si using Pd-W and Pt-W alloys

AU - Eizenberg, M.

AU - Ottaviani, G.

AU - Tu, K. N.

PY - 1980

Y1 - 1980

N2 - We have investigated the effect of substrate temperature on the reaction between Si and Pd-W and Pt-W alloys by I-V measurement of Schottky barrier height. We found that by maintaining a substrate temperature of 100°C during the deposition of W-rich Pd20W80 alloys, Schottky contacts of Pd2Si on Si can be obtained without any subsequent annealing. Similarly, a substrate temperature of 300°C enables the formation of PtSi during the depostion of W-rich Pt20W80 alloys. For Pd-rich Pd80W20 and Pt-rich Pt80W 20 alloys, the substrate-temperature effect is not as significant as for the W-rich alloys.

AB - We have investigated the effect of substrate temperature on the reaction between Si and Pd-W and Pt-W alloys by I-V measurement of Schottky barrier height. We found that by maintaining a substrate temperature of 100°C during the deposition of W-rich Pd20W80 alloys, Schottky contacts of Pd2Si on Si can be obtained without any subsequent annealing. Similarly, a substrate temperature of 300°C enables the formation of PtSi during the depostion of W-rich Pt20W80 alloys. For Pd-rich Pd80W20 and Pt-rich Pt80W 20 alloys, the substrate-temperature effect is not as significant as for the W-rich alloys.

UR - http://www.scopus.com/inward/record.url?scp=0346510651&partnerID=8YFLogxK

U2 - 10.1063/1.91713

DO - 10.1063/1.91713

M3 - 文章

AN - SCOPUS:0346510651

SN - 0003-6951

VL - 37

SP - 87

EP - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

ER -