Crystallization in fluorinated and hydrogenated amorphous silicon thin films

F. Edelman; C. Cytermann; R. Brener; M. Eizenberg; Yu L. Khait; R. Weil; W. Beyer

doi:10.1063/1.356572

Crystallization in fluorinated and hydrogenated amorphous silicon thin films

F. Edelman^*, C. Cytermann, R. Brener, M. Eizenberg, Yu L. Khait, R. Weil, W. Beyer

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

The amorphous-to-crystalline (AC) transition of amorphous Si thin films containing fluorine or hydrogen is studied by transmission electron microscopy. The AC transition can be described quantitatively by the incubation time prior to the onset of crystallization t₀. This parameter is found to decrease exponentially with temperature with an activation energy of 1.7 eV for a-Si:F and 3.1 eV for a-Si:H:D. It is found that during the crystallization process in a-Si:F the crystallites organize as dendrite single crystals oriented along the 〈110〉 axis perpendicularly to the film surface. a-Si samples that had been covered by Pd or Al crystallize at appreciably lower temperatures. In the case of Al lower activation energies of 0.7 eV for hydrogenated and 0.4 eV for fluorinated a-Si are measured. In the case of Pd/a-Si:H,F for both kinds of a-Si an activation energy of 1.7 eV is found.

Original language	English
Pages (from-to)	7875-7880
Number of pages	6
Journal	Journal of Applied Physics
Volume	75
Issue number	12
DOIs	https://doi.org/10.1063/1.356572
State	Published - 1994
Externally published	Yes

Access to Document

10.1063/1.356572

Cite this

@article{114b1c50093b4ee6913f195d2c56edef,

title = "Crystallization in fluorinated and hydrogenated amorphous silicon thin films",

abstract = "The amorphous-to-crystalline (AC) transition of amorphous Si thin films containing fluorine or hydrogen is studied by transmission electron microscopy. The AC transition can be described quantitatively by the incubation time prior to the onset of crystallization t0. This parameter is found to decrease exponentially with temperature with an activation energy of 1.7 eV for a-Si:F and 3.1 eV for a-Si:H:D. It is found that during the crystallization process in a-Si:F the crystallites organize as dendrite single crystals oriented along the 〈110〉 axis perpendicularly to the film surface. a-Si samples that had been covered by Pd or Al crystallize at appreciably lower temperatures. In the case of Al lower activation energies of 0.7 eV for hydrogenated and 0.4 eV for fluorinated a-Si are measured. In the case of Pd/a-Si:H,F for both kinds of a-Si an activation energy of 1.7 eV is found.",

author = "F. Edelman and C. Cytermann and R. Brener and M. Eizenberg and Khait, {Yu L.} and R. Weil and W. Beyer",

year = "1994",

doi = "10.1063/1.356572",

language = "英语",

volume = "75",

pages = "7875--7880",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "12",

}

TY - JOUR

T1 - Crystallization in fluorinated and hydrogenated amorphous silicon thin films

AU - Edelman, F.

AU - Cytermann, C.

AU - Brener, R.

AU - Eizenberg, M.

AU - Khait, Yu L.

AU - Weil, R.

AU - Beyer, W.

PY - 1994

Y1 - 1994

N2 - The amorphous-to-crystalline (AC) transition of amorphous Si thin films containing fluorine or hydrogen is studied by transmission electron microscopy. The AC transition can be described quantitatively by the incubation time prior to the onset of crystallization t0. This parameter is found to decrease exponentially with temperature with an activation energy of 1.7 eV for a-Si:F and 3.1 eV for a-Si:H:D. It is found that during the crystallization process in a-Si:F the crystallites organize as dendrite single crystals oriented along the 〈110〉 axis perpendicularly to the film surface. a-Si samples that had been covered by Pd or Al crystallize at appreciably lower temperatures. In the case of Al lower activation energies of 0.7 eV for hydrogenated and 0.4 eV for fluorinated a-Si are measured. In the case of Pd/a-Si:H,F for both kinds of a-Si an activation energy of 1.7 eV is found.

AB - The amorphous-to-crystalline (AC) transition of amorphous Si thin films containing fluorine or hydrogen is studied by transmission electron microscopy. The AC transition can be described quantitatively by the incubation time prior to the onset of crystallization t0. This parameter is found to decrease exponentially with temperature with an activation energy of 1.7 eV for a-Si:F and 3.1 eV for a-Si:H:D. It is found that during the crystallization process in a-Si:F the crystallites organize as dendrite single crystals oriented along the 〈110〉 axis perpendicularly to the film surface. a-Si samples that had been covered by Pd or Al crystallize at appreciably lower temperatures. In the case of Al lower activation energies of 0.7 eV for hydrogenated and 0.4 eV for fluorinated a-Si are measured. In the case of Pd/a-Si:H,F for both kinds of a-Si an activation energy of 1.7 eV is found.

UR - http://www.scopus.com/inward/record.url?scp=36449009267&partnerID=8YFLogxK

U2 - 10.1063/1.356572

DO - 10.1063/1.356572

M3 - 文章

AN - SCOPUS:36449009267

SN - 0021-8979

VL - 75

SP - 7875

EP - 7880

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

ER -

Crystallization in fluorinated and hydrogenated amorphous silicon thin films

Abstract

Access to Document

Other files and links

Fingerprint

Cite this