Compound formation at the interaction of Pd with strained layers of Si 1-xGex epitaxially grown on Si(100)

A. Buxbaum; M. Eizenberg; A. Raizman; F. Schaffler

doi:10.1063/1.105358

Compound formation at the interaction of Pd with strained layers of Si _1-xGe_x epitaxially grown on Si(100)

A. Buxbaum^*, M. Eizenberg, A. Raizman, F. Schaffler

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

The interaction of thin Pd films deposited on strained layers of Si _1-xGe_x epitaxially grown on Si(100) was studied. The Ge concentration in the molecular beam epitaxy grown Si_1-xGe_x films was x=0.16, and their thickness 2300 Å. A highly textured ternary compound (Pd₂Si_1-yGe_y) formed concurrently with the PdGe phase, at annealing temperatures between 200 and 550 °C. Above 500 °C, a region of Si_1-xGe_x alloy with high Ge concentration formed between the fully reacted compound and the unreacted Si_1-xGe_x layer.

Original language	English
Pages (from-to)	665-667
Number of pages	3
Journal	Applied Physics Letters
Volume	59
Issue number	6
DOIs	https://doi.org/10.1063/1.105358
State	Published - 1991
Externally published	Yes

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title = "Compound formation at the interaction of Pd with strained layers of Si 1-xGex epitaxially grown on Si(100)",

abstract = "The interaction of thin Pd films deposited on strained layers of Si 1-xGex epitaxially grown on Si(100) was studied. The Ge concentration in the molecular beam epitaxy grown Si1-xGex films was x=0.16, and their thickness 2300 {\AA}. A highly textured ternary compound (Pd2Si1-yGey) formed concurrently with the PdGe phase, at annealing temperatures between 200 and 550 °C. Above 500 °C, a region of Si1-xGex alloy with high Ge concentration formed between the fully reacted compound and the unreacted Si1-xGex layer.",

author = "A. Buxbaum and M. Eizenberg and A. Raizman and F. Schaffler",

year = "1991",

doi = "10.1063/1.105358",

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pages = "665--667",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Compound formation at the interaction of Pd with strained layers of Si 1-xGex epitaxially grown on Si(100)

AU - Buxbaum, A.

AU - Eizenberg, M.

AU - Raizman, A.

AU - Schaffler, F.

PY - 1991

Y1 - 1991

N2 - The interaction of thin Pd films deposited on strained layers of Si 1-xGex epitaxially grown on Si(100) was studied. The Ge concentration in the molecular beam epitaxy grown Si1-xGex films was x=0.16, and their thickness 2300 Å. A highly textured ternary compound (Pd2Si1-yGey) formed concurrently with the PdGe phase, at annealing temperatures between 200 and 550 °C. Above 500 °C, a region of Si1-xGex alloy with high Ge concentration formed between the fully reacted compound and the unreacted Si1-xGex layer.

AB - The interaction of thin Pd films deposited on strained layers of Si 1-xGex epitaxially grown on Si(100) was studied. The Ge concentration in the molecular beam epitaxy grown Si1-xGex films was x=0.16, and their thickness 2300 Å. A highly textured ternary compound (Pd2Si1-yGey) formed concurrently with the PdGe phase, at annealing temperatures between 200 and 550 °C. Above 500 °C, a region of Si1-xGex alloy with high Ge concentration formed between the fully reacted compound and the unreacted Si1-xGex layer.

UR - http://www.scopus.com/inward/record.url?scp=36449004229&partnerID=8YFLogxK

U2 - 10.1063/1.105358

DO - 10.1063/1.105358

M3 - 文章

AN - SCOPUS:36449004229

SN - 0003-6951

VL - 59

SP - 665

EP - 667

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

Compound formation at the interaction of Pd with strained layers of Si _1-xGe_x epitaxially grown on Si(100)

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