Abstract
In situ Kelvin Probe (KP) measurements performed on HfNx showed an increase of the vacuum work function as a function of N content from a value of 3.9 eV (silicon conduction band edge) for pure Hf to a value of 5 eV (silicon valence band edge) for x ∼ 2. In contrast, capacitance-voltage (C-V) measurements showed that the effective work function increased only until x < 1 and saturated around a value of 4.6 eV (silicon midgap). This behavior is attributed to Fermi level pinning, which is probably due to oxidation of the HfNx during the reactive sputtering deposition step.
Original language | English |
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Pages (from-to) | 1771-1773 |
Number of pages | 3 |
Journal | Microelectronic Engineering |
Volume | 86 |
Issue number | 7-9 |
DOIs | |
State | Published - Jul 2009 |
Externally published | Yes |
Keywords
- Fermi level pinning
- Metal/dielectric interfaces