Comparative study of radiation defect dynamics in 3C-SiC by X-ray diffraction, Raman scattering, and ion channeling

L. B. Bayu Aji; E. Stavrou; J. B. Wallace; A. Boulle; A. Debelle; S. O. Kucheyev

doi:10.1007/s00339-018-2325-7

Comparative study of radiation defect dynamics in 3C-SiC by X-ray diffraction, Raman scattering, and ion channeling

L. B. Bayu Aji^*, E. Stavrou, J. B. Wallace, A. Boulle, A. Debelle, S. O. Kucheyev

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

At moderately elevated temperatures, radiation defects in SiC exhibit pronounced dynamic annealing, which remains poorly understood. Here, we study 3C-SiC bombarded at 100 ^∘ C with pulsed beams of 500 keV Ar ions. Radiation damage is monitored by a combination of X-ray diffraction, Raman scattering, and ion channeling. Similar damage buildup behavior but with different defect relaxation time constants, ranging from ∼ 1 to ∼ 6 ms, is observed for the different types of lattice defects probed by these techniques. A correlation between relaxation times and the nature of the defects is proposed. These results reveal additional complexity of radiation defect dynamics in SiC and demonstrate that results of different defect characterization techniques are needed for a better understanding of dynamic annealing processes in solids.

Original language	English
Article number	28
Journal	Applied Physics A: Materials Science and Processing
Volume	125
Issue number	1
DOIs	https://doi.org/10.1007/s00339-018-2325-7
State	Published - 1 Jan 2019
Externally published	Yes

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title = "Comparative study of radiation defect dynamics in 3C-SiC by X-ray diffraction, Raman scattering, and ion channeling",

abstract = " At moderately elevated temperatures, radiation defects in SiC exhibit pronounced dynamic annealing, which remains poorly understood. Here, we study 3C-SiC bombarded at 100 ∘ C with pulsed beams of 500 keV Ar ions. Radiation damage is monitored by a combination of X-ray diffraction, Raman scattering, and ion channeling. Similar damage buildup behavior but with different defect relaxation time constants, ranging from ∼ 1 to ∼ 6 ms, is observed for the different types of lattice defects probed by these techniques. A correlation between relaxation times and the nature of the defects is proposed. These results reveal additional complexity of radiation defect dynamics in SiC and demonstrate that results of different defect characterization techniques are needed for a better understanding of dynamic annealing processes in solids.",

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T1 - Comparative study of radiation defect dynamics in 3C-SiC by X-ray diffraction, Raman scattering, and ion channeling

AU - Bayu Aji, L. B.

AU - Stavrou, E.

AU - Wallace, J. B.

AU - Boulle, A.

AU - Debelle, A.

AU - Kucheyev, S. O.

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N2 - At moderately elevated temperatures, radiation defects in SiC exhibit pronounced dynamic annealing, which remains poorly understood. Here, we study 3C-SiC bombarded at 100 ∘ C with pulsed beams of 500 keV Ar ions. Radiation damage is monitored by a combination of X-ray diffraction, Raman scattering, and ion channeling. Similar damage buildup behavior but with different defect relaxation time constants, ranging from ∼ 1 to ∼ 6 ms, is observed for the different types of lattice defects probed by these techniques. A correlation between relaxation times and the nature of the defects is proposed. These results reveal additional complexity of radiation defect dynamics in SiC and demonstrate that results of different defect characterization techniques are needed for a better understanding of dynamic annealing processes in solids.

AB - At moderately elevated temperatures, radiation defects in SiC exhibit pronounced dynamic annealing, which remains poorly understood. Here, we study 3C-SiC bombarded at 100 ∘ C with pulsed beams of 500 keV Ar ions. Radiation damage is monitored by a combination of X-ray diffraction, Raman scattering, and ion channeling. Similar damage buildup behavior but with different defect relaxation time constants, ranging from ∼ 1 to ∼ 6 ms, is observed for the different types of lattice defects probed by these techniques. A correlation between relaxation times and the nature of the defects is proposed. These results reveal additional complexity of radiation defect dynamics in SiC and demonstrate that results of different defect characterization techniques are needed for a better understanding of dynamic annealing processes in solids.

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Comparative study of radiation defect dynamics in 3C-SiC by X-ray diffraction, Raman scattering, and ion channeling

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