Border trap reduction in Al2O3/InGaAs gate stacks

Kechao Tang; Roy Winter; Liangliang Zhang; Ravi Droopad; Moshe Eizenberg; Paul C. McIntyre

doi:10.1063/1.4936100

Border trap reduction in Al₂O₃/InGaAs gate stacks

Kechao Tang, Roy Winter, Liangliang Zhang, Ravi Droopad, Moshe Eizenberg, Paul C. McIntyre

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

The effect of Al₂O₃ atomic layer deposition (ALD) temperature on the border trap density (N_bt) of Al₂O₃/InGaAs gate stacks is investigated quantitatively, and we demonstrate that lowering the trimethylaluminum (TMA)/water vapor ALD temperature from 270 °C to 120 °C significantly reduces N_bt. The reduction of N_bt coincides with increased hydrogen incorporation in low temperature ALD-grown Al₂O₃ films during post-gate metal forming gas annealing. It is also found that large-dose (∼6000 L) exposure of the In_0.53Ga_0.47As (100) surface to TMA immediately after thermal desorption of a protective As₂ capping layer is an important step to guarantee the uniformity and reproducibility of high quality Al₂O₃/InGaAs samples made at low ALD temperatures.

Original language	English
Article number	202102
Journal	Applied Physics Letters
Volume	107
Issue number	20
DOIs	https://doi.org/10.1063/1.4936100
State	Published - 16 Nov 2015
Externally published	Yes

Access to Document

10.1063/1.4936100

Cite this

@article{d49003cf86754a288383112692a65014,

title = "Border trap reduction in Al2O3/InGaAs gate stacks",

abstract = "The effect of Al2O3 atomic layer deposition (ALD) temperature on the border trap density (Nbt) of Al2O3/InGaAs gate stacks is investigated quantitatively, and we demonstrate that lowering the trimethylaluminum (TMA)/water vapor ALD temperature from 270 °C to 120 °C significantly reduces Nbt. The reduction of Nbt coincides with increased hydrogen incorporation in low temperature ALD-grown Al2O3 films during post-gate metal forming gas annealing. It is also found that large-dose (∼6000 L) exposure of the In0.53Ga0.47As (100) surface to TMA immediately after thermal desorption of a protective As2 capping layer is an important step to guarantee the uniformity and reproducibility of high quality Al2O3/InGaAs samples made at low ALD temperatures.",

author = "Kechao Tang and Roy Winter and Liangliang Zhang and Ravi Droopad and Moshe Eizenberg and McIntyre, {Paul C.}",

note = "Publisher Copyright: {\textcopyright} 2015 AIP Publishing LLC.",

year = "2015",

month = nov,

day = "16",

doi = "10.1063/1.4936100",

language = "英语",

volume = "107",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "20",

}

TY - JOUR

T1 - Border trap reduction in Al2O3/InGaAs gate stacks

AU - Tang, Kechao

AU - Winter, Roy

AU - Zhang, Liangliang

AU - Droopad, Ravi

AU - Eizenberg, Moshe

AU - McIntyre, Paul C.

PY - 2015/11/16

Y1 - 2015/11/16

N2 - The effect of Al2O3 atomic layer deposition (ALD) temperature on the border trap density (Nbt) of Al2O3/InGaAs gate stacks is investigated quantitatively, and we demonstrate that lowering the trimethylaluminum (TMA)/water vapor ALD temperature from 270 °C to 120 °C significantly reduces Nbt. The reduction of Nbt coincides with increased hydrogen incorporation in low temperature ALD-grown Al2O3 films during post-gate metal forming gas annealing. It is also found that large-dose (∼6000 L) exposure of the In0.53Ga0.47As (100) surface to TMA immediately after thermal desorption of a protective As2 capping layer is an important step to guarantee the uniformity and reproducibility of high quality Al2O3/InGaAs samples made at low ALD temperatures.

AB - The effect of Al2O3 atomic layer deposition (ALD) temperature on the border trap density (Nbt) of Al2O3/InGaAs gate stacks is investigated quantitatively, and we demonstrate that lowering the trimethylaluminum (TMA)/water vapor ALD temperature from 270 °C to 120 °C significantly reduces Nbt. The reduction of Nbt coincides with increased hydrogen incorporation in low temperature ALD-grown Al2O3 films during post-gate metal forming gas annealing. It is also found that large-dose (∼6000 L) exposure of the In0.53Ga0.47As (100) surface to TMA immediately after thermal desorption of a protective As2 capping layer is an important step to guarantee the uniformity and reproducibility of high quality Al2O3/InGaAs samples made at low ALD temperatures.

UR - http://www.scopus.com/inward/record.url?scp=84947814323&partnerID=8YFLogxK

U2 - 10.1063/1.4936100

DO - 10.1063/1.4936100

M3 - 文章

AN - SCOPUS:84947814323

SN - 0003-6951

VL - 107

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

M1 - 202102

ER -

Border trap reduction in Al₂O₃/InGaAs gate stacks

Abstract

Access to Document

Other files and links

Fingerprint

Cite this