Blocking of interfacial diffusion at Ag/Alq                         3                          by LiF

X. Z. Wang; Z. T. Xie; X. J. Wang; Y. C. Zhou; W. H. Zhang; X. M. Ding; X. Y. Hou

doi:10.1016/j.apsusc.2006.08.023

Blocking of interfacial diffusion at Ag/Alq ₃ by LiF

X. Z. Wang, Z. T. Xie, X. J. Wang, Y. C. Zhou, W. H. Zhang, X. M. Ding, X. Y. Hou^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

X-ray photoelectron spectroscopy has been applied to interface studies of Ag/tris-(8-hydroxyquinoline) aluminum (Alq ₃ ) and Ag/LiF/Alq ₃ . For Ag/Alq ₃ , diffusion of Ag atoms into the Alq ₃ layer occurs immediately after the adhesion of the metal onto the organic layer and the process lasts several hours. Insertion of a monolayer-thick LiF buffer at the interface can effectively block the diffusion process. This is quite different from what is observed from Al/LiF/Alq ₃ , where Al penetrates into the LiF layer as deep as several nanometers. It is thus concluded that the LiF buffer may play different roles in Ag/LiF/Alq ₃ and Al/LiF/Alq ₃ and hence different mechanisms may dominate in the two cases for the enhanced carrier injection observed.

Original language	English
Pages (from-to)	3930-3932
Number of pages	3
Journal	Applied Surface Science
Volume	253
Issue number	8
DOIs	https://doi.org/10.1016/j.apsusc.2006.08.023
State	Published - 15 Feb 2007
Externally published	Yes

Keywords

Alq
Interfacial diffusion
Metal/organic interface
Organic light-emitting device
X-ray photoelectron spectroscopy

Access to Document

10.1016/j.apsusc.2006.08.023

Cite this

@article{26a163606e19465ba30754229a28b745,

title = " Blocking of interfacial diffusion at Ag/Alq 3 by LiF ",

abstract = " X-ray photoelectron spectroscopy has been applied to interface studies of Ag/tris-(8-hydroxyquinoline) aluminum (Alq 3 ) and Ag/LiF/Alq 3 . For Ag/Alq 3 , diffusion of Ag atoms into the Alq 3 layer occurs immediately after the adhesion of the metal onto the organic layer and the process lasts several hours. Insertion of a monolayer-thick LiF buffer at the interface can effectively block the diffusion process. This is quite different from what is observed from Al/LiF/Alq 3 , where Al penetrates into the LiF layer as deep as several nanometers. It is thus concluded that the LiF buffer may play different roles in Ag/LiF/Alq 3 and Al/LiF/Alq 3 and hence different mechanisms may dominate in the two cases for the enhanced carrier injection observed.",

keywords = "Alq, Interfacial diffusion, Metal/organic interface, Organic light-emitting device, X-ray photoelectron spectroscopy",

author = "Wang, {X. Z.} and Xie, {Z. T.} and Wang, {X. J.} and Zhou, {Y. C.} and Zhang, {W. H.} and Ding, {X. M.} and Hou, {X. Y.}",

note = "Funding Information: This work is supported by the National Natural Science Foundation of China.",

year = "2007",

month = feb,

day = "15",

doi = "10.1016/j.apsusc.2006.08.023",

language = "英语",

volume = "253",

pages = "3930--3932",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

number = "8",

}

TY - JOUR

T1 - Blocking of interfacial diffusion at Ag/Alq 3 by LiF

AU - Wang, X. Z.

AU - Xie, Z. T.

AU - Wang, X. J.

AU - Zhou, Y. C.

AU - Zhang, W. H.

AU - Ding, X. M.

AU - Hou, X. Y.

N1 - Funding Information: This work is supported by the National Natural Science Foundation of China.

PY - 2007/2/15

Y1 - 2007/2/15

N2 - X-ray photoelectron spectroscopy has been applied to interface studies of Ag/tris-(8-hydroxyquinoline) aluminum (Alq 3 ) and Ag/LiF/Alq 3 . For Ag/Alq 3 , diffusion of Ag atoms into the Alq 3 layer occurs immediately after the adhesion of the metal onto the organic layer and the process lasts several hours. Insertion of a monolayer-thick LiF buffer at the interface can effectively block the diffusion process. This is quite different from what is observed from Al/LiF/Alq 3 , where Al penetrates into the LiF layer as deep as several nanometers. It is thus concluded that the LiF buffer may play different roles in Ag/LiF/Alq 3 and Al/LiF/Alq 3 and hence different mechanisms may dominate in the two cases for the enhanced carrier injection observed.

AB - X-ray photoelectron spectroscopy has been applied to interface studies of Ag/tris-(8-hydroxyquinoline) aluminum (Alq 3 ) and Ag/LiF/Alq 3 . For Ag/Alq 3 , diffusion of Ag atoms into the Alq 3 layer occurs immediately after the adhesion of the metal onto the organic layer and the process lasts several hours. Insertion of a monolayer-thick LiF buffer at the interface can effectively block the diffusion process. This is quite different from what is observed from Al/LiF/Alq 3 , where Al penetrates into the LiF layer as deep as several nanometers. It is thus concluded that the LiF buffer may play different roles in Ag/LiF/Alq 3 and Al/LiF/Alq 3 and hence different mechanisms may dominate in the two cases for the enhanced carrier injection observed.

KW - Alq

KW - Interfacial diffusion

KW - Metal/organic interface

KW - Organic light-emitting device

KW - X-ray photoelectron spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=33846640530&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2006.08.023

DO - 10.1016/j.apsusc.2006.08.023

M3 - 文章

AN - SCOPUS:33846640530

SN - 0169-4332

VL - 253

SP - 3930

EP - 3932

JO - Applied Surface Science

JF - Applied Surface Science

IS - 8

ER -

Blocking of interfacial diffusion at Ag/Alq ₃ by LiF

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this