Abstract
Band gap and band offsets of hafnium and zirconium oxides were investigated on Ge substrates with a fixed Al2O3/GeO2 passivation layer. Chemical properties and band alignment with Ge were determined by X-ray photoelectron spectroscopy; characterization of structure and morphology was done using transmission electron microscopy. All samples investigated were found to be chemically suitable for Ge advanced applications and with sufficient energy barriers for holes and electrons for the use of Ge as a future channel material.
Original language | English |
---|---|
Pages (from-to) | 1557-1559 |
Number of pages | 3 |
Journal | Microelectronic Engineering |
Volume | 88 |
Issue number | 7 |
DOIs | |
State | Published - Jul 2011 |
Externally published | Yes |
Keywords
- Band alignment
- Germanium
- High mobility channel
- High-k dielectrics