Abstract
We propose two novel methods of determining nonideal Schottky and p-n junction diodes parameters from I-V plots. The series resistance Rs, saturation current Is, as well as the bias-dependent ideality factor n(V), can be obtained from two successive I-V measurements - one solely of the diode and the other with an external resistance added in series with the measured diode. Our analysis confirms that the methods produce accurate and reliable results even when the conventional techniques fail, such as when we have strongly varying function n(V) in the presence of series resistance and an experimental noise.
| Original language | English |
|---|---|
| Pages (from-to) | 5481-5489 |
| Number of pages | 9 |
| Journal | Journal of Applied Physics |
| Volume | 78 |
| Issue number | 9 |
| DOIs | |
| State | Published - 1995 |
| Externally published | Yes |